2SC6145 description sanken lapt transistors have an innovative design, produced by adapting advancements in the unique sanken thin-wafer production technology. these npn power transistors achieve faster power-up by decreasing thermal resistance, and provide a higher avalanche breakdown voltage rating. the high power- handling capacity of the to-3p package allows a smaller footprint on the circuit board layout. this series of transistors is very well suited not only for multichannel applications for av (audio-visual) amplifiers and receivers, but also for parallel connection applications for pa (professional audio system) amplifiers. applications include the following: ? single transistors for audio amplifiers ? home audio amplifiers ? professional audio amplifiers ? automobile audio amplifiers ? audio market ? single transistors for general purpose features and benefits ? lapt (high frequency multi emitter transistor) ? small package (to-3p) ? high power handling capacity, 160 w ? improved sound output by reduced on-chip impedance ? for professional audio (pa) applications, v ceo = 260 v versions available ? complementary to 2sa2223 ? recommended output driver: 2sc4382a audio amplification transistor package: 3-lead to-3p e b c 3 2 1 equivalent circuit not to scale 38106
audio amplification transistor 2SC6145 2 absolute maximum ratings at t a = 25c characteristic symbol remarks rating unit collector-base voltage v cbo 230 v collector-emitter voltage v ceo 230 v emitter-base voltage v ebo 5v collector current i c 15 a base current i b 4a collector power dissipation p c t case = 25c 160 w junction temperature t j 150 c storage temperature t stg ?55 to150 c selection guide part number type h fe rating packing 2SC6145* npn range r: 40 to 80 30 pieces per tube range o: 50 to 100 range y: 70 to 140 *specify h fe range when ordering. electrical characteristics at t a = 25c characteristic symbol test conditions min. typ. max. unit collector-cutoff current i cbo v cb = 230 v ? ? 10 a emitter cutoff current i ebo v eb = 5 v ? ? 10 a collector-emitter voltage v (br)ceo i c = 25 ma 230 ? ? v dc current transfer ratio* h fe v ce = 4 v, i c = 5 a 40 ? 140 ? collector-emitter saturation voltage v ce(sat) i c = 5 a, i b = 0.5 a ? ? 0.5 v cutoff frequency f t v ce = 12 v, i e = ?2 a ? 60 ? mhz output capacitance c ob v cb = 10 v, i e = 0 a, f = 1 mhz ? 250 ? pf * h fe rating: 40 to 80 (r brand on package), 50 to 100 (o), 70 to 140 (y). allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
audio amplification transistor 2SC6145 3 performance characteristics v ce (v) i c (a) i c vs. v ce v ce(sat) vs. i b i c vs. v be v ce = 4 v continuous v be (v) i c = 5 a i c = 10 a i c (a) v ce(sat) (v) 0 5 10 15 0 5 10 15 3 2 1 0 0 0.5 1.0 1.5 2.0 02 134 i b = 20 ma 50 ma 100 ma 200 ma 500 ma 300 ma 1 a 3 a i b (a) 0 0.5 1.0 1.5 2.0 125c 25c ?30c 0.01 0.1 1 10 100 10 0 20 50 60 70 80 30 40 0.01 0.10 1.00 10.00 110100 1000 r ja vs. t r ja (c/w) t (ms) f t vs. i e v ce = 12 v continuous f t (mhz) ?i e (a) typ. p c vs. t a 0 50 100 150 200 0 25 50 75 100 125 150 t a (c) p c (w) without heatsink with infinite heatsink 3.5 h fe vs. i c v ce = 4 v continuous i c (a) h fe 0.01 0.1 1 10 dc 10 ms 100 ms 100 10 1 100 1000 125c 25c ?30c 1 10 100 1000 i c (a) 0.1 0.01 1.0 10.0 100.0 v ce (v) safe operating area t a = 25c, single pulse, no heatsink, natural cooling allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
audio amplification transistor 2SC6145 4 package outline drawing, to-3p leadframe plating pb-free. device composition includes high-temperature solder (pb >85%), which is exempted from the rohs directive. 15.6 0.3 ?3.2 0.1 5.0 max 2.1 max terminal dimension at lead tip 1.0 +0.2 ?0.1 2 +0.2 ?0.1 2 +0.2 ?0.1 1.7 +0.2 ?0.1 3 +0.2 ?0.1 0.6 +0.2 ?0.1 19.9 0.3 20.0 min 1.8 0.3 3.5 branding area xxxxxxxx xxxxx xxxxx branding codes (exact appearance at manufacturer discretion): 1st line, type: c6145 2nd line left, lot: ym where: y is the last digit of the year of manufacture m is the month ( 1 to 9, o, n, d ) 2nd line right, subtype: h where: h is the h fe rating ( o, r, or y ; for values see footnote, electrical characteristics table) 12 3 5.45 0.1 14.0 0.3 13.6 0.2 9.6 0.2 15.8 0.2 2.0 0.2 5.0 0.2 6.0 0.2 gate burr: 0.3 mm (max.), mold flash may appear at opposite side terminal core material: cu terminal treatment: ni plating and pb-free solder dip leadform: 100 package: to-3p (m100) approximate weight: 6 g dimensions in millimeters view a 0.7 max view b 0.7 max view a view b exposed heatsink pad allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
audio amplification transistor 2SC6145 5 505 10 45 30 pieces per tube 17 tubes per layer 2 layers per carton 1020 pieces per outer carton dimensions in millimeters 525 118 185 packing specification tube packing allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
audio amplification transistor 2SC6145 6 100 pieces per tray 5 trays per inner carton 4 inner cartons per outer carton 500 pieces maximum per inner carton 2000 pieces maximum per outer carton dimensions in millimeters 365 120 340 160 50 330 bulk packing allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
audio amplification transistor 2SC6145 7 because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions. cautions for storage ? ensure that storage conditions comply with the standard temperature (5c to 35c) and the standard relative humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or humidity. ? avoid locations where dust or harmful gases are present and avoid direct sunlight. ? reinspect for rust on leads and solderability of products that have been stored for a long time. cautions for testing and handling when tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between adjacent products, and shorts to the heatsink. remarks about using silicone grease with a heatsink ? when silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. if more silicone grease than required is applied, it may produce stress. ? coat the back surface of the product and both surfaces of the insulating plate to improve heat transfer between the product and the heatsink. ? volatile-type silicone greases may permeate the product and produce cracks after long periods of time, resulting in reduced heat radiation effect, and possibly shortening the lifetime of the product. ? our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below: type suppliers g746 shin-etsu chemical co., ltd. yg6260 momentive performance materials sc102 dow corning toray silicone co., ltd. heatsink mounting method ? torque when tightening mounting screws. thermal resistance increases when tightening torque is low, and radiation effects are decreased. when the torque is too high, the screw can strip, the heatsink can be deformed, and distortion can arise in the product frame. to avoid these problems, observe the recommended tightening torques for this product package type, to-3p (mt-100): 0.686 to 0.882 n?m (7 to 9 kgf?cm). ? diameter of heatsink hole: < 4 mm. the de ection of the press mold when making the hole may cause the case material to crack at the joint with the heatsink. please pay special attention for this effect. soldering ? when soldering the products, please be sure to minimize the working time, within the following limits: 2605c 10 s 3505c 3 s ? soldering iron should be at a distance of at least 1.5 mm from the body of the products electrostatic discharge ? when handling the products, operator must be grounded. grounded wrist straps worn should have at least 1 m of resistance to ground to prevent shock hazard. ? workbenches where the products are handled should be grounded and be provided with conductive table and floor mats. ? when using measuring equipment such as a curve tracer, the equipment should be grounded. ? when soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltages generated by them from being applied to the products. ? the products should always be stored and transported in our shipping containers or conductive containers, or be wrapped in aluminum foil. warning ? these devices are designed to be operated at lethal voltages and energy levels. circuit designs that embody these components must conform with applicable safety requirements. pre cau tions must be taken to prevent accidental contact with power-line potentials. do not connect ground ed test equipment. the use of an isolation transformer is recommended during circuit development and breadboarding. allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
audio amplification transistor 2SC6145 8 the products described herein are manufactured in ja pan by sanken electric co., ltd. for sale by allegro microsystems, inc. sanken and allegro reserve the right to make, from time to time, such de par tures from the detail spec i fi ca tions as may be re quired to per mit im- prove ments in the per for mance, reliability, or manufacturability of its prod ucts. therefore, the user is cau tioned to ve rify that the in for ma tion in this publication is current before placing any order. when using the products described herein, the ap pli ca bil i ty and suit abil i ty of such products for the intended purpose s hall be reviewed at the users responsibility. although sanken undertakes to enhance the quality and reliability of its prod ucts, the occurrence of failure and defect of sem i con duc tor products at a certain rate is in ev i ta ble. users of sanken products are requested to take, at their own risk, preventative measures including safety design of the equipme nt or systems against any possible injury, death, fires or damages to society due to device failure or malfunction. sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equip ment or apparatus (home ap pli anc es, office equipment, tele com mu ni ca tion equipment, measuring equipment, etc.). their use in any applicat ion requiring radiation hardness assurance (e.g., aero space equipment) is not supported. when considering the use of sanken products in ap pli ca tions where higher reliability is re quired (transportation equipment and its control systems or equip ment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your spec i fi ca tions. the use of sanken products without the written consent of sanken in applications where ex treme ly high reliability is required (aerospace equip- ment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited. the information in clud ed herein is believed to be accurate and reliable. ap pli ca tion and operation examples described in this pub li ca tion are given for reference only and sanken and allegro assume no re spon si bil i ty for any in fringe ment of in dus tri al property rights, intellectual property rights, or any other rights of sanken or allegro or any third party that may result from its use. anti radioactive ray design is not considered for the products listed herein. copyright ? 2008-2009 allegro microsystems, inc. this datasheet is based on sanken datasheet t01-005ja-081027 allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
audio amplification transistor 2SC6145 9 asia-pacific china sanken electric hong kong co., ltd. suite 1026, ocean centre canton road, tsimshatsui kowloon, hong kong tel: 852-2735-5262, fax: 852-2735-5494 sanken electric (shanghai) co., ltd. room 3202, maxdo centre xingyi road 8, changning district shanghai, china tel: 86-21-5208-1177, fax: 86-21-5208-1757 taiwan sanken electric co., ltd. room 1801, 18th floor 88 jung shiau east road, sec. 2 taipei 100, taiwan r.o.c. tel: 886-2-2356-8161, fax: 886-2-2356-8261 japan sanken electric co., ltd. overseas sales headquarters metropolitan plaza building 1-11-1 nishi-ikebukuro, toshima-ku tokyo 171-0021, japan tel: 81-3-3986-6164, fax: 81-3-3986-8637 korea sanken electric korea co., ltd. samsung life yeouido building 16f 23-10, yeouido-dong, yeongdeungpo-gu seoul 150-734, korea tel: 82-2-714-3700, fax: 82-2-3272-2145 singapore sanken electric singapore pte. ltd. 150 beach road, #14-03 the gateway west singapore 189720 tel: 65-6291-4755, fax: 65-6297-1744 europe sanken power systems (uk) limited pencoed technology park pencoed, bridgend cf35 5hy, united kingdom tel: 44-1656-869-100, fax: 44-1656-869-162 north america united states allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01606, u.s.a. tel: 1-508-853-5000, fax: 1-508-853-7895 allegro microsystems, inc. 14 hughes street, suite b105 irvine, california 92618, u.s.a. tel: 1-949-460-2003, fax: 1-949-460-7837 worldwide contacts allegro microsystems, inc. 115 northeast cutoff worcester, massachusetts 01615-0036 u.s.a. 1.508.853.5000; www.allegromicro.com
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